Traditional computer memory chips are finding it difficult to cope with the modern day demands of computing applications. As a result, computers and laptops slow down and rob users of the seamless experience they expect.

Samsung (News - Alert) has started producing the industry’s first two gigabyte (GB), low-power double-data-rate 3 (LPDDR3) memory systems. The company has been using 30 nanometer (nm) class technology for its next-generation mobile devices.

Just 10 months after it started manufacturing the industry’s first 30nm-class based 2GB LPDDR2 memory in October 2011, Samsung started mass production of the industry’s most advanced mobile DRAM (dynamic random access memory) chip.

“We will embrace greater technical cooperation with industry leading mobile device makers, as we continue to provide timely next-generation memory solutions like 2GB LPDDR3 DRAM, in helping to accelerate growth of the mobile memory market,” said Wanhoon Hong, executive vice president, Memory Sales & Marketing at Samsung Electronics. “Furthermore, with this rapid introduction of 2GB LPDDR3, we are moving very assertively to expand our global leadership on the premium side of our extensive memory portfolio.”

Making use of four LPDDR3 chips brought together, LPDDR3 is required for fast processors, high-resolution displays and 3D graphics in tablets and smartphones. The new LPDDR3 is the first time a 2GB LPDDR3 density is available in one package that functions as a space saver.

Recently, the company announced that Samsung’s $7-billion NAND flash plant construction project was at the first stage in Xi'an, Shaanxi province. With a periodic productivity of 100,000 chips and yearly sales of 66 billion yuan ($10.4 billion), the plant will start functioning by the end of 2013.

The general storage and transmission of information, memory cards, USB flash drives, solid-state drives and other related products use NAND chips.

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